Electrophotographic member with an amorphous silicon layer...

Details Electrophotographic member with an amorphous silicon layer... Electrophotographic member with an amorphous silicon layer...

G - Physics

03

G

96/195

G03G 5/08 (2006.01) G03G 5/082 (2006.01)

Patent

CA 1153238

-1- Abstract: An electrophotographic member employs an amorphous silicon photoconductive layer. A part that is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 1010.OMEGA..cm. The electrophotographic member exhibits a satis- factory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amor- phous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light is enhanced.

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