G - Physics – 03 – G
Patent
G - Physics
03
G
96/187
G03G 5/08 (2006.01) G03G 5/043 (2006.01)
Patent
CA 1142789
Abstract of the Disclosure The invention relates to an electrophotographic plate having a laminated structure comprising a first Se layer containing 3 to 10 % by weight of As, a second Se layer containing 40 to 47 % by weight of Te and 3 to 10 % by weight of As and a fourth Se layer consisting solely of Se or comprising Se and up to 10 % by weight of As or an organic semiconductor layer. A substrate is arranged so that at least the face of the substrate which is contiguous to the face of one of the first Se layer and the fourth Se layer or organic semiconductor layer, that is located on the outer side of the laminated structure, is electrically conductive. It is preferred that the fourth Se layer be formed by vacuum evaporation deposition while maintaining the substrate temperature at 50 to 80°C . The resulting electrophotographic plate is sensitive to radia- tion of wavelength in the range of 600 to 800 nm, thus enabling the plate to be used with semiconductor lasers which such emit radiation.
354038
Horigome Shinkichi
Maruyama Eiichi
Mori Yoshiaki
Saito Susumu
Taniguchi Yoshio
Hitachi Ltd.
Kirby Eades Gale Baker
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