H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/768 (2006.01) C25D 5/02 (2006.01) C25D 7/12 (2006.01)
Patent
CA 2359608
Microelectronic interconnections are fabricated by forming a via in a first face of a microelectronic substrate that extends only partially through the microelectronic substrate towards a second face thereof. The via includes a sidewall and a floor. An insulating layer is formed on the sidewall. A plating electrode is formed on the second face. Metal is electroplated in the via from the floor by passing plating current between the plating electrode and the floor through the microelectronic substrate therebetween. The substrate then is thinned at the second face to expose the metal that was electroplated. Electroplated metal through-substrate interconnections thereby may be fabricated.
Dudley Bruce W.
Shen Hong
Wood Robert L.
Jds Uniphase Corporation
Memscap S.a.
Sim & Mcburney
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