C - Chemistry – Metallurgy – 25 – F
Patent
C - Chemistry, Metallurgy
25
F
C25F 3/30 (2006.01) C25D 7/12 (2006.01) C25D 17/00 (2006.01) C25F 7/00 (2006.01) H01L 21/00 (2006.01) H01L 21/288 (2006.01) H01L 21/683 (2006.01) H01L 21/687 (2006.01)
Patent
CA 2464423
In one aspect of the present invention, an exemplary apparatus and method are provided for electropolishing a conductive film on a wafer (1004). An apparatus includes a wafer chuck (1002) for holding a wafer, an actuator (1000) for rotating the wafer chuck, and a nozzle (1010) configured to electropolish the wafer. The apparatus may further include a conductive ring or a shroud (1006). A method of electropolishing a conductive film on a wafer includes rotating a wafer chuck with sufficient speed such that electrolyte fluid incident upon the wafer flows on the surface of the wafer towards the edge of the wafer.
L'invention concerne, selon un aspect, un appareil et un procédé exemplaires de polissage électrolytique de pellicule conductrice sur une plaquette (1004). L'appareil selon l'invention comprend un support de tranche (1002) destiné à maintenir une plaquette, un actionneur (1000) destiné à faire pivoter ledit support de plaquette, et une buse (1010) configurée pour réaliser un polissage électrolytique sur la plaquette. Cet appareil peut également comprendre un anneau conducteur ou une enveloppe (1006). Le procédé de polissage électrolytique de pellicule conductrice selon l'invention consiste à faire pivoter le support de tranche à une vitesse suffisante pour que l'électrolyte venant frapper la plaquette circule sur la surface de ladite plaquette, en direction du bord de celle-ci.
Afnan Muhammed
Gutman Felix
Nuch Voha
Wang Hui
Yih Peihaur
Acm Research Inc.
Borden Ladner Gervais Llp
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