H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/60 (2006.01) H01L 27/02 (2006.01)
Patent
CA 2190416
Protecting device structures are disclosed for protecting one or more protected nodes of an integrated circuit to be protected against electrostatic discharges (ESD). Typically the integrated circuit includes n channel MOS transistors having terminals connected to the protected nodes. In a specific embodiment, the protecting device structure includes an MOS diode structure having source and drain regions and at least a pair of localized auxiliary region. Each of this pair of localized auxiliary regions has a conductivity type that is opposite from that of the source and drain regions. These localized auxiliary regions are located contiguous with the source and drain regions, respectively, and in the channel between the source and drain regions. The protecting device structure is integrated in the integrated circuit and has a terminal that is connected to a terminal of each of the one or more protected nodes of the integrated circuit.
At&t Corp.
Kirby Eades Gale Baker
Ng Kwok Kwok
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