H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/128
H01L 27/08 (2006.01) H01L 21/18 (2006.01) H01L 21/58 (2006.01) H01L 29/18 (2006.01) H01L 29/20 (2006.01) H01L 29/22 (2006.01) H01L 29/24 (2006.01) H01L 29/78 (2006.01) H01L 29/786 (2006.01) H01L 29/94 (2006.01)
Patent
CA 1063254
AN ELECTROSTATICALLY BONDED SEMICONDUCTOR-ON- INSULATOR MOS DEVICE, AND A METHOD OF MAKING THE SAME ABSTRACT OF THE DISCLOSURE An electrostatically bonded semiconductor-on- insulator and particularly semiconductor-on-sapphire MOS devices are made of bulk materials. A semiconductor body of a bulk material of less than about 75 microns in thick- ness is electrostatically bonded to an insulator substrate of a bulk material. A dielectric layer of between 500 and 2,000 Angstroms in thickness is then formed on the semiconductor body to make a MOS semiconductor device and preferably a MOS field-effect transistor. The semiconductor-on-insulator MOS device is pre- ferably made by first forming a major surface of the dielec- tric substrate and a major surface of the semiconductor body in planar configurations, applying a metal layer to the opposed major surface of the insulator substrate, and placing the planar surfaces of the body and substrate in intimate contact. The assembly is then heated to at least 300°C. and preferably at least 700°C. while avoiding oxidation of the contacted surfaces, and thereafter applying an electrical potential of at least 700 volts between said metal layer and the semiconductor body to electrostatically bond the insula- tor substrate to the semiconductor body. The electrostatical- ly bonded assembly is then cooled at a rate less than about 10°C. per minute to a temperature of about 300°C. and pre- ferably to room temperature. Then, a dielectric layer and metal layer are applied on the semiconductor body to complete the semiconductor-on-substrate MOS device. -1-
259100
Francombe Maurice H.
Szedon John R.
Wu Shu-Yau
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