Elimination of heterojunction band discontinuities

Details Elimination of heterojunction band discontinuities Elimination of heterojunction band discontinuities

H - Electricity

01

S

H01S 3/08 (2006.01) H01L 33/00 (2006.01) H01S 3/034 (2006.01) H01S 5/183 (2006.01) H01S 5/042 (2006.01) H01S 5/30 (2006.01)

Patent

CA 2076300

Conduction band or valence band discontinuities occurring at the junction of two unipolar heterogeneous semiconductors can be eliminated by compositional grading of the heterointerface and appropriate doping of the interfacial region. The compositional potential of a graded junction and an interface dipole potential generated by modulation doping of the interfacial region are selected such that they exactly compensate each other. The compositional grading of the interface is achieved by semiparabolic grading of narrow regions immediately adjacent each side of the interface. The modulation doping is achieved by dopingthe two materials with suitable dopants, donors for the conductance band or acceptors for the valence band, depending on the polarity of the structure. Thisreduces the resistance in periodic semiconductor multilayer structures leading to low-resistance distributed Bragg reflectors.

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