Enhancement of short-circuit current by use of wide bandgap...

Details Enhancement of short-circuit current by use of wide bandgap... Enhancement of short-circuit current by use of wide bandgap...

H - Electricity

01

L

345/22

H01L 31/065 (2006.01) H01L 31/0352 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 2033454

ABSTRACT OF THE DISCLOSURE A photovoltaic cell that includes a transparent substrate, a front conductive layer formed on the substrate, a p-type layer formed on the front conductive layer, an i-layer of amorphous silicon formed on the p-layer, a wide bandgap n-type layer formed on the i-layer and a back contact layer formed on the n-type structure. The wide bandgap n-type layer may be an n-type sandwich structure includes first, second and third n-layers alternatingly formed on one another. The first n-layer is formed on the i-layer, the second n-layer is formed on the first n-layer, and the n-layer is formed on the second n-layer. The second n-layer has an optical bandgap wider than the optical bandgap of the first and second n-type layers.

Affiliated with

Also associated with

Rating

Enhancement of short-circuit current by use of wide bandgap... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhancement of short-circuit current by use of wide bandgap..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancement of short-circuit current by use of wide bandgap... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1942155