Epitaxial compositions

Details Epitaxial compositions Epitaxial compositions

H - Electricity

01

L

345/23, 148/2.4

H01L 21/205 (2006.01) H01L 29/267 (2006.01) H01L 31/0304 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1248854

ABSTRACT Epitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

470556

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