Epitaxial devices having reduced dislocation count

Details Epitaxial devices having reduced dislocation count Epitaxial devices having reduced dislocation count

H - Electricity

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L

345/51

H01L 29/207 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1165851

MAHAJAN, S. l - 8 - EPITAXIAL DEVICES HAVING REDUCED DISLOCATION COUNT Abstract of the Disclosure Devices with epitaxial layers are fabricated with reduced dislocation density in the epitaxial layer by use of a thin epitaxial buffer layer and an appropriately doped substrate, for example, InP grown on S-doped InP.

378574

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