Epitaxial growth method and substrate for epitaxial growth

Details Epitaxial growth method and substrate for epitaxial growth Epitaxial growth method and substrate for epitaxial growth

H - Electricity

01

L

H01L 21/31 (2006.01) C30B 25/02 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/302 (2006.01)

Patent

CA 2505631

An epitaxial growing method for growing a compound semiconductor layer (for example, a III-V compound semiconductor layer such as an InGaAs layer, an AlGaAs layer, an AlInAs layer, or an AlInGaAs layer) comprising three or four elements on a substrate (for example, an InP substrate) for growth held by a substrate support by an organic metal vapor phase deposition method, wherein the whole effective use region of the substrate is so polished that the angel of inclination with respect to the (100)-direction lies in the range from 0.00~ to 0.03~ or from 0.04~ to 0.24~, and the compound semiconductor layer with a thickness of 0.5 µm or more is formed on the substrate for growth.

L'invention concerne un procédé de croissance épitaxiale d'une couche composite semi-conductrice (par exemple, d'une couche composite semi-conductrice III-V telle qu'une couche AlGaAs, AlInAs ou AlInGaAs) qui comprend trois ou quatre éléments sur un substrat (par exemple, un substrat InP), destinés à la croissance et placés sur un substrat par un procédé de dépôt en phase vapeur métal-organique. La totalité de la zone d'utilisation efficace du substrat est polie de manière à régler l'angle d'inclinaison par rapport à la direction (100) entre 0,00· et 0,03· ou entre 0,04· et 0,24·, et une couche semi-conductrice composite ayant une épaisseur de 0,5 µm ou plus est formée sur le substrat pour assurer la croissance.

Affiliated with

Also associated with

Rating

Epitaxial growth method and substrate for epitaxial growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial growth method and substrate for epitaxial growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial growth method and substrate for epitaxial growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1477490