Epitaxial growth method using liquid gallium bath

Details Epitaxial growth method using liquid gallium bath Epitaxial growth method using liquid gallium bath

H - Electricity

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H01L 21/20 (2006.01) C30B 19/04 (2006.01) C30B 19/06 (2006.01) C30B 19/10 (2006.01)

Patent

CA 1155974

PHF. 79-592 7 ABSTRACT: Method of manufacturing a semiconductor device by liquid phase epitaxial growth of layers on a substrate. A number of gallium-arsenide or gallium-aluminum-arsenide layers which are doped with elements such as germanium are grown on the substrate in an epitaxy furnace by contacting the substrate successively with a number of melts consist- ing of the components of the various layers. After the last melt has been wiped off, the resulting structure is cooled down to ambient (or room) temperature. During said cooling, the upper surface of the structure is contacted with a liquid bath. In this way doping elements which are still present at the surface are dissolved in the gallium. When at room temperature the gallium is removed, a surface free of doping elements is obtained.

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