Epitaxial growth of dissimilar materials

Details Epitaxial growth of dissimilar materials Epitaxial growth of dissimilar materials

H - Electricity

01

L

356/178

H01L 27/00 (2006.01) G02F 1/095 (2006.01) H01L 21/20 (2006.01) H01L 27/15 (2006.01) H01L 29/04 (2006.01) H01L 29/40 (2006.01)

Patent

CA 1093218

TIEN, P. K. 44 EPITAXIAL GROWTH OF DISSIMILAR MATERIALS Abstract of the Disclosure A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magnetooptic and electrooptic elements on the same substrate.

307223

Affiliated with

Also associated with

Rating

Epitaxial growth of dissimilar materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial growth of dissimilar materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial growth of dissimilar materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-896997