Epitaxial growth of iiia-vb compounds at low temperatures

Details Epitaxial growth of iiia-vb compounds at low temperatures Epitaxial growth of iiia-vb compounds at low temperatures

C - Chemistry, Metallurgy

30

B

148/2.4

C30B 23/02 (2006.01) C30B 25/02 (2006.01) C30B 25/14 (2006.01)

Patent

CA 1086611

ABSTRACT: The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere. The temperature in the epitaxial space is homogeneous and low (600°C) and the qualities of the deposited layers are considerably improved. Application: Epitaxial growth Figure 1a. -9-

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