Epitaxial growth of silicon carbide and resulting silicon...

C - Chemistry – Metallurgy – 30 – B

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C30B 19/02 (2006.01) C30B 19/04 (2006.01) C30B 29/36 (2006.01)

Patent

CA 2205918

A method is disclosed for producing epitaxial layers of silicon carbide that are substantially free of micropipe defects. The method comprises growing an epitaxial layer of silicon carbide on a silicon carbide substrate by liquid phase epitaxy from a melt of silicon carbide in silicon and an element that enhances the solubility of silicon carbide in the melt. The atomic percentage of that element predominates over the atomic percentage of silicon in the melt. Micropipe defects propagated by the substrate into the epitaxial layer are closed by continuing to grow the epitaxial layer under the proper conditions until the epitaxial layer has a thickness at which micropipe defects present in the substrate are substantially no longer reproduced in the epitaxial layer, and the number of micropipe defects in the epitaxial layer is substantially reduced.

L'invention présente un procédé visant à produire des couches épitaxiales de carbure de silicium, pratiquement exemptes d'imperfections du type microconduit. Ce procédé consiste à faire croître une couche épitaxiale de carbure de silicium sur un substrat de carbure de silicium par épitaxie en phase liquide à partir d'un bain de fusion de carbure de silicium dans du silicium et d'un élément qui augmente la solubilité du carbure de silicium dans le bain de fusion. Le pourcentage atomique de cet élément est plus important que celui du silicium dans le bain. La poursuite de la croissance de la couche épitaxiale, dans des conditions appropriées, permet d'obturer les microconduits que le substrat y a propagé jusqu'à ce que la couche épitaxiale soit d'une épaisseur telle que les imperfections du type microconduit présentes dans le substrat cessent pratiquement de s'y multiplier et que leur nombre dans cette même couche ait diminué de façon notable.

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