Epitaxial magnesium oxide as a buffer layer for formation of...

Details Epitaxial magnesium oxide as a buffer layer for formation of... Epitaxial magnesium oxide as a buffer layer for formation of...

H - Electricity

01

L

H01L 21/31 (2006.01) H01L 39/24 (2006.01)

Patent

CA 2083760

TITLE: Epitaxial Magnesium Oxide as a Buffer Layer for Formation of Subsequent Layers on Tetrahedral Semiconductors Abstract of the Disclosure A structure includes a semiconducting substrate on which is formed an epitaxial buffer layer of MgO and an epitaxial layer of ferroelectric material or superconducting material or both. The semiconducting substrate is of the tetrahedral structure type, and may be an elemental or compound material. The MgO buffer layer on the tetrahedral semiconducting substrate allows epitaxial formation of the subsequent layers, facilitating the formation of a number of novel monolithic devices.

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