Epitaxial process of forming ferrite, fe3o4 and .gamma....

Details Epitaxial process of forming ferrite, fe3o4 and .gamma.... Epitaxial process of forming ferrite, fe3o4 and .gamma....

H - Electricity

01

F

204/96.06

H01F 10/18 (2006.01) H01F 10/20 (2006.01) H01F 41/14 (2006.01)

Patent

CA 1062657

EPITAXIAL PROCESS OF FORMING FERRITE, Fe3O4 AND .gamma.Fe2O3 THIN FILMS ON SPECIAL MATERIALS Abstract of the Disclosure A first thin film of appropriate texture, lattice constant, and crystal structure, such as body centered cubic vanadium or chromium with (110) texture is deposited upon a rigid or flexible substrate forming a plurality of poly- crystals. A ferrite such as magnetite (Fe3O4) is sputtered from a target onto the first thin film forming a mixture of .gamma.Fe2O3 and Fe3O4 substantially completely without formation of Fe or other oxides of iron, providing good magnetic characteristics and resistance to corrosion. The substrate temperature can be maintained as low as 200°C for both steps when sputtering or evaporation is employed.

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