Epitaxial silicon layer and method to deposit such

Details Epitaxial silicon layer and method to deposit such Epitaxial silicon layer and method to deposit such

H - Electricity

01

L

356/148, 356/182

H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/22 (2006.01) H01L 21/223 (2006.01)

Patent

CA 2040660

An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation of the n-type dopant into the silicon layer as an electronically active dopant. Also provided are a silicon layer including a P-N junction wherein the layer contains an n-type dopant and germanium, and devices such as transistors incorporating an in-situ n-doped silicon layer.

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