Epitaxial tunnels

Details Epitaxial tunnels Epitaxial tunnels

H - Electricity

01

L

356/151

H01L 29/04 (2006.01) G01D 15/18 (2006.01) H01L 21/20 (2006.01) H01L 23/473 (2006.01) H01L 29/06 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1130474

EPITAXIAL TUNNELS Abstract Epitaxial tunnels may be formed in crystalline bodies of crystal- line materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques. Yo978-035

343368

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