Epitaxial wafer and device

Details Epitaxial wafer and device Epitaxial wafer and device

H - Electricity

01

L

H01L 29/04 (2006.01) H01L 29/02 (2006.01)

Patent

CA 2517985

An epitaxial wafer and a device having improved characteristics are obtained. The epitaxial wafer includes a substrate, a buffer layer formed on the substrate, a light-receiving layer formed on the buffer layer, and a window layer. The light-receiving layer is constituted of an epitaxial film having its lattice constant larger than that of a material of which the substrate is made. The window layer is formed on the light-receiving layer and constituted of one or a plurality of layers arranged to contact the light-receiving layer. A constituent layer of the window layer that is in contact with the light-receiving layer has its lattice constant smaller than the larger one of respective lattice constants of the light-receiving layer and the buffer layer. The window layer has a thickness of at least 0.2 µm and at most 2.0 µm.

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