Epitaxially grown compound-semiconductor crystal

Details Epitaxially grown compound-semiconductor crystal Epitaxially grown compound-semiconductor crystal

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H01L 21/203 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01) H01L 21/31 (2006.01) H01L 21/338 (2006.01) H01L 29/205 (2006.01) H01L 29/812 (2006.01)

Patent

CA 2067578

An epitaxially grown compound-semiconductor crystal comprising a substrate, a buffer layer formed directly or indirectly on the substrate, and an active layer formed on the buffer layer. The buffer layer comprises (A) a high- resistivity AlGaAs or AlGaInP layer doped with oxygen or/and a transition metal and, formed thereon, (B) a layer consisting of high-purity GaAs, InGaP, or AlGaAs.

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