Equilibrium growth technique for preparing pbs.sub.xse in1-x...

Details Equilibrium growth technique for preparing pbs.sub.xse in1-x... Equilibrium growth technique for preparing pbs.sub.xse in1-x...

H - Electricity

01

L

345/23

H01L 21/20 (2006.01) C30B 23/02 (2006.01) H01L 31/08 (2006.01)

Patent

CA 1152620

EQUILIBRIUM GROWTH TECHNIQUE FOR PREPARING PbSxSe1-x EPILAYERS ABSTRACT A high temperature method for the preparation of single and multiple eptaxial layers of single-phase lead sulfide-selenide, [Pb]a[SxSe1-x]1-a between one and zero, inclusive, and a = 0.500 ? 0.003, deposited upon substrates of barium fluoride, BaF2, main- tained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the substrate is exposed to the vapor emanating from the single chimney of a two-zone, dual-chamber furnace, thereby providing an epilayer of uniform, and predetermined electrical optical properties.

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