H - Electricity – 05 – F
Patent
H - Electricity
05
F
317/3
H05F 3/00 (2006.01) H01L 27/02 (2006.01) H05F 3/02 (2006.01)
Patent
CA 1332072
IMPROVED ESD LOW RESISTANCE INPUT STRUCTURE ABSTRACT An input protection structure effectively protects input circuitry from positive-going ESD pulses. The input protection structure includes a transistor having a reduced beta, connected in series with one or more diodes between the input pin and VCC. In one embodiment, the transistor having reduced beta is constructed in the same manner as a fuse device. The structure is formed in an integrated fashion, with- out the need for metallic interconnections within the structure itself, thereby decreasing impedance while minimizing surface area in the integrated circuit.
604795
National Semiconductor Corporation
Smart & Biggar
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