H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 23/60 (2006.01) H01L 21/46 (2006.01) H01L 31/0216 (2006.01) H01L 31/105 (2006.01) H01L 31/107 (2006.01)
Patent
CA 2343086
A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielectric layer above the active region and electrically contacting the active region. A metal electrostatic discharge (ESD) protection structure is disposed in the dielectric layer around the active region contact, wherein the ESD protection structure electrically contacts the active region layer of the substrate to provide an ESD discharge path for charge on the surface of the dielectric layer.
Derkits Gustav Edward Jr.
Marchut Leslie
Nash Franklin R.
Agere Systems Optoelectronics Guardian Corporation
Bereskin & Parr
Derkits Gustav Edward Jr.
Marchut Leslie
Nash Franklin R.
LandOfFree
Esd resistant device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Esd resistant device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Esd resistant device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1501531