Etchant for silicon dioxide films disposed atop silicon or...

Details Etchant for silicon dioxide films disposed atop silicon or... Etchant for silicon dioxide films disposed atop silicon or...

H - Electricity

01

L

356/178

H01L 21/306 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1126877

Abstract An etchant comprising a solution of hydrogen fluo- ride dissolved in an organic solvent such as gly- cerine. The solution is substantially free of un- bound water and ammonium fluoride. The etchant is particularly suitable for removing silicon dioxide disposed atop a metallic silicide formed in a silicon semiconductor where the silicon may be exposed.

337622

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