Etching and hole arrays

G - Physics – 03 – F

Patent

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G03F 7/00 (2006.01)

Patent

CA 2654973

Lithographic and nanolithographic methods that involve patterning a first compound on a substrate surface, exposing non-patterned areas of the substrate surface to a second compound and removing the first compound while leaving the second compound intact. The resulting hole patterns can be used as templates for either chemical etching of the patterned area of the substrate or metal deposition on the patterned area of the substrate.

La présente invention concerne des procédés lithographiques et nanolithographiques qui impliquent de graver un premier composé sur une surface de substrat, à exposer des zones non gravées de la surface du substrat à un deuxième composé et à éliminer le premier composé tout en laissant intact le deuxième composé. Les motifs de trous résultants peuvent être utilisés en tant que gabarits soit pour la gravure chimique de la zone gravée du substrat soit pour le dépôt de métal sur la zone gravée du substrat.

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