Etching composition and method for using same

Details Etching composition and method for using same Etching composition and method for using same

C - Chemistry, Metallurgy

09

K

149/20

C09K 13/00 (2006.01) C23F 1/00 (2006.01) C23F 1/20 (2006.01)

Patent

CA 1079614

ABSTRACT An improved etchant solution for selectively etching unprotected areas of metal film from a substrate which comprises between about 65 and about 90 parts by weight phosphoric acid, between about 0.5 and about 5 parts by weight of a perchloric acid component and between about 9 and about 30 parts by weight water, which composition contains from 0 to about 5% by weight total volume of a neutral or anionic wetting agent. The invention also comprises the method of utilizing the etchant composition and the improved precision device produced thereby.

277798

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