Etching method

Details Etching method Etching method

C - Chemistry, Metallurgy

30

B

148/3.2

C30B 33/12 (2006.01) H01L 21/268 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1275613

ABSTRACT OF THE DISCLOSURE The surface of a material having elemental constituents selected from Groups III and V of the Periodic Table is photochemically etched in a reducing environment. Etching is carried out by illuminating a halogenated hydrocarbon gas, eg methyl iodide, with radiation, such as a laser beam or ultra-violet light in the vicinity of the material. The reducing environment may be pro- vided by the presence of sufficient hydrogen to suppress the effect of any oxygen leaking into the system. Methods according to the invention may be used in particular in the production of opto- electronic devices.

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