Etching of gallium stains in liquid phase epitaxy

Details Etching of gallium stains in liquid phase epitaxy Etching of gallium stains in liquid phase epitaxy

H - Electricity

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356/165

H01L 21/302 (2006.01) H01L 21/208 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1127321

ABSTRACT OF THE DISCLOSURE A method of treating semiconductor substrates after epi- taxial growth of III-V compound semiconductor layers on the sub- strate by a liquid phase epitaxial growth method using gallium as solvent, wherein the substrate is treated by an enchant com- pring phosphoric acid, acetic acid and nitric acid thereby selec- tively removing residue stains of gallium on the surface of the substrate, without etching the substrate.

342458

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