Etching of iii-v semiconductor materials in the preparation...

Details Etching of iii-v semiconductor materials in the preparation... Etching of iii-v semiconductor materials in the preparation...

H - Electricity

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356/190, 345/22

H01L 21/30 (2006.01) C23C 16/02 (2006.01) H01L 21/306 (2006.01) H01L 21/363 (2006.01) H01L 29/04 (2006.01) H01L 29/267 (2006.01) H01L 31/04 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)

Patent

CA 1086431

ETCHING OF III-V SEMICONDUCTOR MATERIALS IN THE PREPARATION OF HETERODIODES Abstract of the Disclosure A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultane- ously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP/n-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP/n-CdS cell. Additionally, a p-GaAs/n-CdS heterodiode cell has been produced.

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