Etching of substrates of light emitting devices

Details Etching of substrates of light emitting devices Etching of substrates of light emitting devices

H - Electricity

01

L

H01L 33/00 (2010.01) H01L 33/48 (2010.01) H01L 33/58 (2010.01) H01S 5/026 (2006.01)

Patent

CA 2560688

Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide substrate. The etch may remove damage from the substrate that results from other processing of the substrate, such as damage from sawing the substrate. The etch may remove an amorphous region of silicon carbide in the substrate.

L'invention concerne la fabrication d'un dispositif électroluminescent consistant à attaquer chimiquement un substrat du dispositif électroluminescent. L'attaque chimique peut être une attaque chimique aqueuse suffisante pour augmenter une quantité de lumière extraite à travers le substrat. L'attaque chimique peut être une attaque chimique aqueuse directe d'un substrat de carbure de silicium. L'attaque chimique peut éliminer les dommages du substrat résultant d'un autre traitement du substrat, tel que les dommages liés au sciage du substrat. L'attaque chimique peut éliminer une région amorphe de carbure de silicium du substrat.

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