Etching solution for etching porous silicon, etching method...

Details Etching solution for etching porous silicon, etching method... Etching solution for etching porous silicon, etching method...

C - Chemistry, Metallurgy

23

F

C23F 1/24 (2006.01) C09K 13/08 (2006.01) C30B 33/08 (2006.01) H01L 21/20 (2006.01) H01L 21/306 (2006.01) H01L 21/76 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2061264

A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

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