C - Chemistry – Metallurgy – 09 – K
Patent
C - Chemistry, Metallurgy
09
K
149/17, 149/21
C09K 13/08 (2006.01) H01L 21/311 (2006.01)
Patent
CA 1313612
ABSTRACT This invention relates to etching solutions containing wetting agents to properly wet substrates of components in the manufacture of integrated circuits. The etching solution comprises an aqueous solution of ammonium fluoride and a wetting amount of a nonionic wetting agent selected from the group consisting of an alkylphenol polyglycidol ether having the formula: Image H wherein R is an alkyl group having from about 4 to about 12 carbon atoms and n is from about 3 to about 15; and an alkyl polysaccharide having the formula: R'O(R''O)xZy wherein R' is alkyl, alkylphenol, hydroxyalkyl, hydroxy- alkylphenol, or mixtures thereof and the alkyl groups contain from about 6 to about 18 carbon atoms, R'' is an alkyl group which contains from 1 to about 4 carbon atoms, x is from 0 to about 5, Z is a moiety derived from a reducing saccharide containing from 5 to 6 carbon atoms, and y is from about 1 to about 5.
556649
Roche Thomas Stephen
Scardera Michael
Olin Corporation
Osler Hoskin & Harcourt Llp
LandOfFree
Etching solutions containing ammonium fluoride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching solutions containing ammonium fluoride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching solutions containing ammonium fluoride will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1309056