Etching solutions containing ammonium fluoride and anionic...

Details Etching solutions containing ammonium fluoride and anionic... Etching solutions containing ammonium fluoride and anionic...

C - Chemistry, Metallurgy

09

K

149/21

C09K 13/08 (2006.01) H01L 21/306 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1320113

ETCHING SOLUTIONS CONTAINING AMMONIUM FLUORIDE AND ANIONIC SULFATE ESTERS OF ALKYLPHENOL POLYGLYCIDOL ETHERS Abstract of the Disclosure An etching solution for use, for example, in the manufacture of integrated circuits is comprised of an aqueous solution of ammonium fluoride and a wetting amount of a sulfate ester of an alkylphenol polyglycidol ether or an alkyl amine glycidol adduct. The etching solution preferably contains hydrogen fluoride in a volume ratio of NH4F to HF is from about 3:1 to about 100:1. The novel etching solutions of the present invention all retain their wetting properties after 0.2 micron filtration, even under continuous filtration conditions. Moreover, the etching solutions after filtering have the property of wetting substrates more effectively and yield more uniform results by etching small geometries (1 to 5 microns) and large geometries (> 5 micron) of silicon dioxide in a patterned resist at the same rate without additional deleterious effects. Further, the nonionic wetting agents do not incorporate metallic ions in their structure. 1737H

599639

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