C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 33/06 (2006.01) B32B 9/00 (2006.01) C03B 23/20 (2006.01) C03B 27/00 (2006.01) C03B 29/00 (2006.01) C09J 1/00 (2006.01) H01L 23/02 (2006.01) H01L 23/06 (2006.01) H01L 23/10 (2006.01)
Patent
CA 2291191
The present invention provides for a method and articles produced from this method for eutectically bonding together single crystal elements (12, 14), such as sapphire, to form a strong bond therebe-tween which can withstand high temperatures and chemical attack. The eutectic bonding mixture of the present invention (16) can include a Group IIIA compound, such as yttria.
Cette invention concerne un procédé et des articles produits à l'aide de ce procédé qui permet de lier de manière eutectique des éléments (12, 14) de monocristaux tels que du saphir, pour former une liaison forte entre ces derniers qui peut supporter des températures élevées et résister aux agressions chimiques. Le mélange de liaison eutectique de cette invention (16) peut comprendre un composé du groupe IIIA tel que l'Yttria.
Axelson Scott R.
Bates Herbert E.
Collins Joseph M.
Fitzgibbon Jeremiah J.
Locker John W.
Riches Mckenzie & Herbert Llp
Saphikon Inc.
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