External cavity type tunable semiconductor laser source

Details External cavity type tunable semiconductor laser source External cavity type tunable semiconductor laser source

H - Electricity

01

S

H01S 5/00 (2006.01) H01S 3/081 (2006.01) H01S 5/14 (2006.01)

Patent

CA 2290208

An external cavity type tunable semiconductor laser source for converting emitted light from an LD (semiconductor laser) 1 into collimated light through a lens 4, making the light incident on a diffraction grating 2, through which a wavelength is selected, then once applying the light of the selected wavelength to a mirror and reflecting the light thereon, then again making the reflected light incident on the diffraction grating 2 and feeding back the light into the LD 1. The mirror is formed of, for example, a triangular prism 3 and the angle which a side 3b closest to a cabinet 10 for housing the LD 1 and the lens 4 forms with a reflection face 3a coated with a surface reflection film is an acute angle 3c.

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