Fabricating integrated circuits incorporating high-...

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H - Electricity

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356/146

H01L 29/06 (2006.01) H01L 23/485 (2006.01) H01L 29/08 (2006.01) H01L 29/72 (2006.01) H01L 29/732 (2006.01)

Patent

CA 1099822

FABRICATING INTEGRATED CIRCUITS INCORPORATING HIGH PERFORMANCE BIPOLAR TRANSISTORS Abstract A method and resulting semiconductor device which utilizes a mesa emitter structure in a silicon body. The mesa emitter is formed in the silicon semiconductor body and then passivated on its sidewalls using a suitable dielectric. The base region is formed both under the mesa emitter and adjacent thereto. The emitter-base junction is substantially in one plane and substantially without a sidewall component. Contacts are provided to the emitter and to the base region surrounding the mesa emitter. The resulting structure is such that a base contact can be within a few thousand angstroms of the intrinsic base region.

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