Fabrication based on radiation sensitive resists including a...

Details Fabrication based on radiation sensitive resists including a... Fabrication based on radiation sensitive resists including a...

G - Physics

03

F

96/266

G03F 7/038 (2006.01)

Patent

CA 1166885

Abstract of the Disclosure Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

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