Fabrication of a semiconductor device of indium antimonide

Details Fabrication of a semiconductor device of indium antimonide Fabrication of a semiconductor device of indium antimonide

H - Electricity

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H01L 21/18 (2006.01) C30B 35/00 (2006.01) H01L 21/265 (2006.01) H01L 21/316 (2006.01) H01L 21/60 (2006.01) H01L 29/20 (2006.01)

Patent

CA 1061015

FABRICATION OF SEMICONDUCTOR DEVICE Abstract of the Disclosure A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion im- planting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between pre- selected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the pre- selected regions of the substrate to thereby provide the semiconductor de- vice; and semiconductor device obtained thereby.

254110

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