C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 31/20 (2006.01) C30B 25/02 (2006.01) H01L 21/205 (2006.01) H01L 21/331 (2006.01)
Patent
CA 2059408
- 16- FABRICATION OF ALUMINUM-CONTAINING SEMICONDUCTOR DEVICES Abstract Processes for introduction of aluminum during MetalOrganic Molecular Beam Epitaxy are dependent upon specification of source materials for yielding the aluminum. A major obstacle to use of this excellent growth process, particularly as applied to a major class of compound semiconductor devices, is thereby overcome.Expeditious growth of high quality materials within the direct bandgap AlGaAs composition range has broad implications as concerning LSI/VLSI integrated circuits - electronic, photonic, as well as hybrid.
Abernathy Cammy R.
Hobson William S.
Jordan Andrew S.
Pearton Stephen J.
Ren Fan
Abernathy Cammy R.
American Telephone And Telegraph Company
Hobson William S.
Jordan Andrew S.
Kirby Eades Gale Baker
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