Fabrication of cleaved semiconductor lasers

Details Fabrication of cleaved semiconductor lasers Fabrication of cleaved semiconductor lasers

H - Electricity

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H01L 21/465 (2006.01) H01L 21/304 (2006.01) H01L 21/3063 (2006.01) H01S 5/02 (2006.01) H01S 5/10 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1201520

- 17 - FABRICATION OF CLEAVED SEMICONDUCTOR LASERS Abstract A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 100, 50 or even 25 µm) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.

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