Fabrication of devices with a silicon oxide region

Details Fabrication of devices with a silicon oxide region Fabrication of devices with a silicon oxide region

C - Chemistry, Metallurgy

23

C

117/85

C23C 16/40 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1240215

- 11 - FABRICATION OF DEVICES WITH A SILICON OXIDE REGION Abstract Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature- sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.

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