Fabrication of grooved semiconductor devices

Details Fabrication of grooved semiconductor devices Fabrication of grooved semiconductor devices

H - Electricity

01

L

356/151

H01L 21/306 (2006.01) H01L 21/308 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1225465

- 15 - THE FABRICATION OF GROOVED SEMICONDUCTOR DEVICES Abstract V-grooves are etched in Group III-V compound semiconductors using a composite mask comprising a thin native oxide layer on the semiconductor and a dielectric etch mask on the native oxide. Described in detail is the application of this technique to etching V-grooves in InP for the fabrication of CSBH InP/InGaAsP lasers.

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