Fabrication of microminiature devices using plasma etching...

Details Fabrication of microminiature devices using plasma etching... Fabrication of microminiature devices using plasma etching...

H - Electricity

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L

356/162

H01L 21/302 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1160761

FLAMM-1 - 17 - FABRICATION OF MICROMIMINATURE DEVICES USING PLASMA ETCHING OF SILICON AND RESULTANT PRODUCTS Abstract of the Disclosure This invention relates to fabrication of microminiature devices, such as integrated circuit utilizing the delination of fine-line patterns in such devices by dry etching processes. By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of doped or undoped monocrystalline silicon and polycrystalline silicon is achieved. The etching processes are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled.

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