Fabrication of oxynitride frontside microstructures

Details Fabrication of oxynitride frontside microstructures Fabrication of oxynitride frontside microstructures

G - Physics

01

L

356/23

G01L 9/00 (2006.01) G01F 1/22 (2006.01) H01L 21/314 (2006.01)

Patent

CA 1317034

ABSTRACT OF THE DISCLOSURE Method for producing a low stress oxynitride microstructure on a semiconductor substrate at temperatures not higher than 500°C. The method is particularly adapted for forming integrated silicon sensors where the oxynitride microstructure is fabricated on a substrate under conditions which do not harm the integrated circuit electronics.

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