Fabrication of semiconductive devices

Details Fabrication of semiconductive devices Fabrication of semiconductive devices

H - Electricity

01

L

356/153, 356/172

H01L 21/24 (2006.01) H01L 21/265 (2006.01) H01L 21/285 (2006.01) H01L 29/47 (2006.01)

Patent

CA 1078529

Abstract of the Disclosure An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at æ particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer to react the platinum and the silicon such that the interface between the platinum- silicide and the silicon penetrates beyond the peak depth of the implant, some of the encountered dopant ions being accumulated at the advancing interface in snowplow fashion. There results a narrowed and concentrated layer of implanted ions localized just below the interface of the silicide and the silicon. The presence of this layer permits conduction in the forward direction at lower applied voltages without substantially degrading the reverse blocking characteristics.

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