H - Electricity – 01 – L
Patent
H - Electricity
01
L
117/74, 148/2.1,
H01L 21/203 (2006.01) C03B 20/00 (2006.01) C23C 14/10 (2006.01) C30B 23/00 (2006.01) H01L 21/316 (2006.01) H01L 21/56 (2006.01) H01L 21/314 (2006.01)
Patent
CA 2014934
- 18- Fabrication of Semiconductor Devices Using Phosphosilicate Glasses Abstract This invention is directed to a process of producing semiconductor i devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P2O5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m2/g, preferably about 200 m2/g, with phosphoric acid andwater to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650°C in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100 to 180°C per hour to a peak sintering temperature below 1200°C and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., especially for optical type and semiconductor devices. Production of the phosphosilicate glass by the sol/gel technique is highly advantageous over the conventional melting technique, being faster and much less expensive than the latter.
Fleming Debra Anne
Johnson David Wilfred Jr.
Singh Shobha
Vanuitert Legrand G.
Zydzik George J.
American Telephone And Telegraph Company
Kirby Eades Gale Baker
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