Fabrication of semiconductor devices utilizing ion implantation

Details Fabrication of semiconductor devices utilizing ion implantation Fabrication of semiconductor devices utilizing ion implantation

G - Physics

01

L

349/63, 349/56.2

G01L 9/06 (2006.01) G01L 1/18 (2006.01) G01L 1/22 (2006.01) G01L 9/00 (2006.01) H01L 29/84 (2006.01) H04R 23/00 (2006.01)

Patent

CA 1088664

ABSTRACT Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant.

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