Fabrication of semiconductor devices utilizing patterned...

B - Operations – Transporting – 05 – D

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

356/153

B05D 3/06 (2006.01) C23C 16/48 (2006.01) H01L 21/285 (2006.01) H01L 21/3205 (2006.01)

Patent

CA 1270070

Abstract: This invention relates to a method of fabricating semiconductor devices, which includes growing patterned metal layers. Patterned metal growth is obtained on a substrate by illuminating the substrate in the presence of a metal containing molecule adsorbed on the substrate. After initial illumination, the photoreacted molecules catalyze further metal growth without further illumination.

534963

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication of semiconductor devices utilizing patterned... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of semiconductor devices utilizing patterned..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of semiconductor devices utilizing patterned... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1339854

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.