Fabrication process and fabrication apparatus of soi substrate

Details Fabrication process and fabrication apparatus of soi substrate Fabrication process and fabrication apparatus of soi substrate

H - Electricity

01

L

H01L 21/20 (2006.01) H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2192630

The conventional fabrication processes of SOI substrate employed wet etching for removing a porous single-crystal Si region, but wet etching involved difficulties in management of concentration for fabricating SOI substrates in high volume, which caused reduction in productivity. Therefore, provided is a fabrication process of SOI substrate comprises a step of forming a non-porous single-crystal Si region on a surface of a porous single-crystal Si region of a single-crystal Si substrate having at least the porous single-crystal Si region, a step of bonding a support substrate through an insulating region to a surface of the non-porous single-crystal Si region, and a step of removing the porous single-crystal Si region, wherein the step of removing the porous single-crystal Si region comprises a step of performing dry etching in which an etch rate of the porous single-crystal Si region is greater than that of the non-porous single-crystal Si region.

Affiliated with

Also associated with

Rating

Fabrication process and fabrication apparatus of soi substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process and fabrication apparatus of soi substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process and fabrication apparatus of soi substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1745729